Near-Field Scan Immunity (NFSI) is a powerful technique to identify root-cause of failures produced during radiated immunity tests at IC level. However, a prediction method of the radiated immunity level from NFSI results is still missing. Such a method would help designers to anticipate risks of radiated immunity non-compliance after a near-field scan campaign. This paper presents the equivalence between far-field and near-field coupling on an electrically short interconnected in order to derive an estimator of IC radiated susceptibility in TEM/GTEM cell from NFSI. This estimator is tested and validated on near-field scan results on a bandgap reference. Moreover, the proposed approach relies on calibrated injection probes. As no technical specification defines a standard calibration method, this paper addresses also this issue.