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Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing

Abstract : In this work, a thorough study of the phosphorus (P) heavy doping of thin Silicon-On-Insulator (SOI) layers by UV nanosecond Laser Thermal Annealing (LTA) is presented. The melting regimes and the regrowth processes as well as the redistribution and activation of P in
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Preprints, Working Papers, ...
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https://hal.archives-ouvertes.fr/hal-03454821
Contributor : Caroline Bonafos Connect in order to contact the contributor
Submitted on : Monday, November 29, 2021 - 1:38:38 PM
Last modification on : Tuesday, January 4, 2022 - 6:10:42 AM

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  • HAL Id : hal-03454821, version 1

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N Chery, M Zhang, Richard Monflier, G Seine, V Paillard, et al.. Study of recrystallization and activation processes in thin and highly doped Silicon-On-Insulator layers by nanosecond Laser Thermal Annealing. 2021. ⟨hal-03454821⟩

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