Skip to Main content Skip to Navigation
Journal articles

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers

Abstract : 30 nm-thick pseudomorphic Si1-xGex layers with Ge concentrations x ranging from 0 to 0.4 were submitted to Ultraviolet Nanosecond Laser Annealing (UV-NLA). The impact of UV-NLA on the various regimes and on the layer crystallinity was assessed for each Ge concentration. This study highlighted the existence of four annealing regimes, with notably a surface melt regime with isolated molten islands on the surface. The strain in the layer depended on the liquid/solid interface roughness and on the stored elastic energy in the layers. In the case of smooth liquid/solid interfaces, a limit for perfect recrystallization was estimated near 750 mJ/m².
Complete list of metadatas

Cited literature [61 references]  Display  Hide  Download

https://hal.laas.fr/hal-02983939
Contributor : Fuccio Cristiano <>
Submitted on : Friday, October 30, 2020 - 2:29:03 PM
Last modification on : Tuesday, November 24, 2020 - 4:00:08 PM

File

2020_ASS_SiGe_laser_Dagault_su...
Files produced by the author(s)

Identifiers

Citation

L. Dagault, S. Kerdilès, P Acosta-Alba, J.-M. Hartmann, J.-P. Barnes, et al.. Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers. Applied Surface Science, Elsevier, 2020, 527, pp.146752. ⟨10.1016/j.apsusc.2020.146752⟩. ⟨hal-02983939⟩

Share

Metrics

Record views

82

Files downloads

149