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LAAS-MPN : Materials and Processes for Nanoelectronics Researchteam |  |
Journal articles
Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si 1−x Ge x /Si epilayers
Abstract : 30 nm-thick pseudomorphic Si1-xGex layers with Ge concentrations x ranging from 0 to 0.4 were submitted to Ultraviolet Nanosecond Laser Annealing (UV-NLA). The impact of UV-NLA on the various regimes and on the layer crystallinity was assessed for each Ge concentration. This study highlighted the existence of four annealing regimes, with notably a surface melt regime with isolated molten islands on the surface. The strain in the layer depended on the liquid/solid interface roughness and on the stored elastic energy in the layers. In the case of smooth liquid/solid interfaces, a limit for perfect recrystallization was estimated near 750 mJ/m².
Cited literature [61 references]
https://hal.laas.fr/hal-02983939
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Submitted on : Friday, October 30, 2020 - 2:29:03 PM
Last modification on : Wednesday, November 3, 2021 - 7:16:29 AM
Long-term archiving on: : Sunday, January 31, 2021 - 6:25:44 PM
Contributor : Fuccio Cristiano Connect in order to contact the contributor
Submitted on : Friday, October 30, 2020 - 2:29:03 PM
Last modification on : Wednesday, November 3, 2021 - 7:16:29 AM
Long-term archiving on: : Sunday, January 31, 2021 - 6:25:44 PM
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