Fabrication of GaAs nanowires and GaAs-Si axial heterostructure nanowires on Si (100) substrate for new applications

Abstract : The integration of III-V semiconductor nanowires on Si for nanoelectronics or nanophotonics devices is still a challenge. The monolithic integration of GaAs nanowires on silicon (100) by top-down approach enables new possibilities for the design and devices fabrication. We demonstrate the fabrication of GaAs-Si(100) nanowires array by plasma etching.
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Conference papers
IEEE NMDC 2016, Oct 2016, Toulouse, France. 2016
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  • HAL Id : hal-01415380, version 1

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Aurélie Lecestre, Nicolas Mallet, Mickaël Martin, Thierry Baron, Guilhem Larrieu. Fabrication of GaAs nanowires and GaAs-Si axial heterostructure nanowires on Si (100) substrate for new applications. IEEE NMDC 2016, Oct 2016, Toulouse, France. 2016. 〈hal-01415380〉

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