Fabrication of GaAs nanowires and GaAs-Si axial heterostructure nanowires on Si (100) substrate for new applications
Résumé
The integration of III-V semiconductor nanowires on Si for nanoelectronics or nanophotonics devices is still a challenge. The monolithic integration of GaAs nanowires on silicon (100) by top-down approach enables new possibilities for the design and devices fabrication. We demonstrate the fabrication of GaAs-Si(100) nanowires array by plasma etching.
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