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HAL-LAAS Open Archive Laboratory for Analysis and Architecture of Systems |  |
Journal articles
Modeling of the interface formation during CuO deposition on Al(111) substrate: linking material design and elaboration process parameters through multi-levels approach
Abstract : In this paper, we use a multi-levels modeling approach to describe the elaboration of directly integrated energetic materials. The deposition of copper oxide on aluminum substrate is described. Atomic scale calculations are first conducted to identify local mechanisms involved during the growth of CuO on Al(111). These atomic scale data are then used to parameterize a macroscopic code, inspired on a kinetic Monte Carlo methodology dedicated to simulate vapor like deposition process. The objective is to establish the link between the microstructure of materials and the way they are achieved, i.e. the process parameters such as temperature and gas pressure. This work is conducted in the context of the integration of nano-structured energetic thermites used as micro energy source in microelectronic devices. We show that the temperature of the deposition process appears as the driving parameter to tailor the thickness of interfacial layers.
Cited literature [36 references]
https://hal.laas.fr/hal-01574744
Contributor : Anne Hemeryck <>
Submitted on : Friday, August 18, 2017 - 9:54:18 AM
Last modification on : Thursday, June 10, 2021 - 3:05:02 AM
Contributor : Anne Hemeryck <>
Submitted on : Friday, August 18, 2017 - 9:54:18 AM
Last modification on : Thursday, June 10, 2021 - 3:05:02 AM
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