Modeling of the interface formation during CuO deposition on Al(111) substrate: linking material design and elaboration process parameters through multi-levels approach

Abstract : In this paper, we use a multi-levels modeling approach to describe the elaboration of directly integrated energetic materials. The deposition of copper oxide on aluminum substrate is described. Atomic scale calculations are first conducted to identify local mechanisms involved during the growth of CuO on Al(111). These atomic scale data are then used to parameterize a macroscopic code, inspired on a kinetic Monte Carlo methodology dedicated to simulate vapor like deposition process. The objective is to establish the link between the microstructure of materials and the way they are achieved, i.e. the process parameters such as temperature and gas pressure. This work is conducted in the context of the integration of nano-structured energetic thermites used as micro energy source in microelectronic devices. We show that the temperature of the deposition process appears as the driving parameter to tailor the thickness of interfacial layers.
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Soumis le : vendredi 18 août 2017 - 09:54:18
Dernière modification le : jeudi 29 mars 2018 - 09:04:04

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Mathilde Guiltat, Nicolas Salles, Marie Brut, Georges Landa, Nicolas Richard, et al.. Modeling of the interface formation during CuO deposition on Al(111) substrate: linking material design and elaboration process parameters through multi-levels approach. Modelling and Simulation in Materials Science and Engineering, IOP Publishing, 2017, Focus on MMM 2016, 25 (6), pp.064005. 〈http://iopscience.iop.org/article/10.1088/1361-651X/aa7bbc/meta;jsessionid=8B76486D63ECCDCDFAEE0D5544A95821.c1.iopscience.cld.iop.org〉. 〈10.1088/1361-651X/aa7bbc〉. 〈hal-01574744〉

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