R. G. Arns, The other transistor: early history of the metal-oxide semiconductor field-effect transistor, Engineering Science & Education Journal, vol.7, issue.5, p.233, 1998.
DOI : 10.1049/esej:19980509

T. Zhu and M. N. Chong, Prospects of metal???insulator???semiconductor (MIS) nanojunction structures for enhanced hydrogen evolution in photoelectrochemical cells: A review, Nano Energy, vol.12, p.347, 2015.
DOI : 10.1016/j.nanoen.2015.01.001

R. Jansen, Silicon spintronics, Nature Materials, vol.85, issue.5, p.400, 2012.
DOI : 10.1103/PhysRevB.85.094401

S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Teraoka, and Y. Takakuwa, Si(001) Surface Layer-by-Layer Oxidation Studied by Real-Time Photoelectron Spectroscopy using Synchrotron Radiation, Japanese Journal of Applied Physics, vol.46, issue.5B, p.3244, 2007.
DOI : 10.1143/JJAP.46.3244

S. Ogawa and Y. Takakuwa, Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy, Japanese Journal of Applied Physics, vol.45, issue.9A, p.7063, 2006.
DOI : 10.1143/JJAP.45.7063

H. Z. Massoud, J. D. Plummer, and E. A. Irene, Thermal Oxidation of Silicon in Dry Oxygen Growth-Rate Enhancement in the Thin Regime, Journal of The Electrochemical Society, vol.132, issue.11, p.2685, 1985.
DOI : 10.1149/1.2113648

E. Kobeda and A. Irene, In situ stress measurements during thermal oxidation of silicon, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.7, issue.2, p.163, 1989.
DOI : 10.1116/1.584709

A. Hemeryck, N. Richard, A. Estève, and M. D. Rouhani, Active oxidation: Silicon etching and oxide decomposition basic mechanisms using density functional theory, Surface Science, vol.601, issue.9, p.2082, 2007.
DOI : 10.1016/j.susc.2007.03.008

URL : https://hal.archives-ouvertes.fr/hal-01575520

A. Hemeryck, N. Richard, A. Estève, and M. D. Rouhani, Diffusion of oxygen atom in the topmost layer of the Si(100) surface: Structures and oxidation kinetics, Surface Science, vol.601, issue.11, p.2339, 2007.
DOI : 10.1016/j.susc.2007.03.038

A. Hemeryck, A. Mayne, N. Richard, A. Estève, Y. J. Chabal et al., Difficulty for oxygen to incorporate into the silicon network during initial O2 oxidation of Si(100)-(2??1), The Journal of Chemical Physics, vol.126, issue.11, p.114707, 2007.
DOI : 10.1103/PhysRevB.71.125316

URL : https://hal.archives-ouvertes.fr/hal-01575518

T. Akiyama and H. Kageshima, Reaction mechanisms of oxygen at SiO2/Si(100) interface, Surface Science, vol.576, issue.1-3, p.65, 2005.
DOI : 10.1016/j.susc.2005.01.001

T. Yamasaki, K. Kato, and T. Uda, Centers, Physical Review Letters, vol.39, issue.132, p.146102, 2003.
DOI : 10.1143/JJAP.39.L699

A. Bongiorno and A. Pasquarello, Oxygen Diffusion through the Disordered Oxide Network during Silicon Oxidation, Physical Review Letters, vol.38, issue.12, p.125901, 2002.
DOI : 10.1016/0022-3093(80)90493-7

A. Bongiorno and A. Pasquarello, O2 oxidation reaction at the Si(100)-SiO2 interface: A first-principles investigation, Journal of Materials Science, vol.15, issue.12, p.3047, 2005.
DOI : 10.1007/s10853-005-2663-7

K. Shiraishi, H. Kageshima, and M. Uematsu, Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands, Japanese Journal of Applied Physics, vol.39, issue.Part 2, No. 12B, p.1263, 2000.
DOI : 10.1143/JJAP.39.L1263

H. Kageshima and K. Shiraishi, /Si(100) Interfaces, Physical Review Letters, vol.396, issue.132, p.5936, 1998.
DOI : 10.1038/23908

H. Watanabe, T. Baba, and M. Ichikawa, /Si Interfaces, Japanese Journal of Applied Physics, vol.39, issue.Part 1, No. 4B, p.2015, 2000.
DOI : 10.1143/JJAP.39.2015

T. Akiyama, T. Ito, H. Kageshima, and M. Uematsu, interface, Physical Review B, vol.77, issue.11, p.115356, 2008.
DOI : 10.1103/PhysRevLett.90.186101

URL : https://hal.archives-ouvertes.fr/inria-00637848

R. J. Jaccodine and W. A. Schlegel, Interface, Journal of Applied Physics, vol.62, issue.6, p.2429, 1966.
DOI : 10.1063/1.1702540

A. Korkin, J. C. Greer, and G. Bersuker, interfaces: Stress and strain on the atomic scale, Physical Review B, vol.138, issue.105, p.165312, 2006.
DOI : 10.1143/JJAP.43.7899

X. L. Han, G. Larrieu, and C. D. Krzeminski, Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning, Nanotechnology, vol.24, issue.49, p.495301, 2013.
DOI : 10.1088/0957-4484/24/49/495301

C. D. Krzeminski, X. L. Han, and G. Larrieu, Understanding of the retarded oxidation effects in silicon nanostructures, Applied Physics Letters, vol.5, issue.26, p.263111, 2012.
DOI : 10.1021/nl100062n

URL : https://hal.archives-ouvertes.fr/hal-00643617

G. T. Barkema and N. Mousseau, Event-Based Relaxation of Continuous Disordered Systems, Physical Review Letters, vol.4, issue.21, p.4358, 1996.
DOI : 10.1016/0927-0256(95)00041-3

URL : http://arxiv.org/abs/cond-mat/9607156

R. Malek and N. Mousseau, Dynamics of Lennard-Jones clusters: A characterization of the activation-relaxation technique, Physical Review E, vol.111, issue.6, pp.7723-7728, 2000.
DOI : 10.1063/1.480217

E. Machado-charry, L. K. Béland, D. Caliste, L. Genovese, N. Mousseau et al., based activation-relaxation technique, The Journal of Chemical Physics, vol.135, issue.3, p.34102, 2011.
DOI : 10.1021/ct9003383

G. Kresse and J. Furthmüller, total-energy calculations using a plane-wave basis set, Physical Review B, vol.2, issue.16, p.11169, 1996.
DOI : 10.1016/0927-0256(94)90105-8

G. Kresse and J. Furthmüller, From ultrasoft pseudopotentials to the projector augmented-wave method, Physical Review B, vol.9, issue.3, p.1758, 1999.
DOI : 10.1103/PhysRevB.55.13479

L. J. Munro and D. J. Wales, Defect migration in crystalline silicon, Physical Review B, vol.56, issue.6, p.3969, 1999.
DOI : 10.1103/PhysRevA.55.R14

G. Henkelman and H. Jónsson, A dimer method for finding saddle points on high dimensional potential surfaces using only first derivatives, The Journal of Chemical Physics, vol.82, issue.15, p.7010, 1999.
DOI : 10.1103/PhysRevLett.81.168

N. Mousseau and G. T. Barkema, Traveling through potential energy landscapes of disordered materials: The activation-relaxation technique, Physical Review E, vol.49, issue.2, p.2419, 1997.
DOI : 10.1103/PhysRevB.49.9441

F. Mellouhi, N. Mousseau, and P. Ordejon, Sampling the diffusion paths of a neutral vacancy in silicon with quantum mechanical calculations, Physical Review B, vol.47, issue.20, p.205202, 2004.
DOI : 10.1103/PhysRevB.57.170

P. Ganster, L. K. Béland, and N. Mousseau, First stages of silicon oxidation with the activation relaxation technique, Physical Review B, vol.86, issue.7, p.75408, 2012.
DOI : 10.1103/PhysRevE.84.046704

URL : https://hal.archives-ouvertes.fr/emse-00828905

F. Fuchs, W. G. Schmidt, and F. Bechstedt, Understanding the optical anisotropy of oxidized Si(001) surfaces, Physical Review B, vol.455, issue.456, p.75353, 2005.
DOI : 10.1103/PhysRevB.44.11048

J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized Gradient Approximation Made Simple, Physical Review Letters, vol.80, issue.18, p.3865, 1996.
DOI : 10.1063/1.446965

P. E. Blöchl, Projector augmented-wave method, Physical Review B, vol.44, issue.24, p.17953, 1994.
DOI : 10.1103/PhysRevB.44.13063

G. Kresse and J. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method, Physical Review B, vol.9, issue.3, p.1758, 1999.
DOI : 10.1103/PhysRevB.55.13479

N. Takahashi, T. Yamasaki, and C. Kaneta, and substrate, physica status solidi (b), vol.156, issue.118, p.2169, 2014.
DOI : 10.1149/1.3236631

URL : https://hal.archives-ouvertes.fr/hal-00097380

K. Gaal-nagy, A. Incze, and G. Onida, optical experiments and first principles calculations, Physical Review B, vol.66, issue.4, p.45312, 2009.
DOI : 10.1103/PhysRevB.67.115315

URL : https://hal.archives-ouvertes.fr/hal-00387575

P. N. Keating, Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure, Physical Review, vol.4, issue.2, p.637, 1996.
DOI : 10.1098/rspa.1959.0192

K. O. Ng and D. Vanderbilt, interface, Physical Review B, vol.81, issue.15, p.10132, 1999.
DOI : 10.1103/PhysRevLett.81.3447

Y. Tu and J. Tersoff, Interface, Physical Review Letters, vol.65, issue.19, p.4393, 2000.
DOI : 10.1063/1.112109

URL : https://hal.archives-ouvertes.fr/tel-01134315

Y. Tu and J. Tersoff, Microscopic Dynamics of Silicon Oxidation, Physical Review Letters, vol.36, issue.8, p.86102, 2002.
DOI : 10.1063/1.104418

S. Lee, R. J. Bondi, and G. S. Hwang, interface: The influence of different Keating-like potential parameters, Journal of Applied Physics, vol.3, issue.11, p.113519, 2011.
DOI : 10.1103/PhysRevB.73.155329

S. Lee, R. J. Bondi, and G. S. Hwang, ) materials, Physical Review B, vol.58, issue.4, p.45202, 2011.
DOI : 10.1103/PhysRevB.73.155329