Hermetic cavities using gold wafer level thermocompression bonding

Samuel Charlot 1 Patrick Pons 2 Monique Dilhan 1 Isabelle Vallet 3 Sebastiano Brida 3
1 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
2 LAAS-MINC - Équipe MIcro et Nanosystèmes pour les Communications sans fil
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
Abstract : This paper presents the study of gold/gold thermocompression bonding at silicon wafer level. The first samples contains sealing rings and electrical pads, and are characterized on pull, and shear test showing bond strength similar to silicon/glass anodic bonding (10MPa-80MPa). A sealed cavity and a piezoresistor on a 30µm-thick silicon membrane are added in the second samples. Helium test, membrane deflection and piezoresistor signal monitoring after aging 14 days at 250°C confirm the vacuum stability inside the cavity after bonding.
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Conference papers
Eurosensors 2017, Sep 2017, Paris, France. eurosensors 2017, 2p., 2017
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Samuel Charlot, Patrick Pons, Monique Dilhan, Isabelle Vallet, Sebastiano Brida. Hermetic cavities using gold wafer level thermocompression bonding. Eurosensors 2017, Sep 2017, Paris, France. eurosensors 2017, 2p., 2017. 〈hal-01583506〉

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