Growth, stability and decomposition of Mg 2 Si ultra-thin films on Si (100)

Abstract : Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6–8 eV band gap) is also reported.
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Soumis le : vendredi 8 septembre 2017 - 08:24:12
Dernière modification le : mardi 11 décembre 2018 - 01:20:42


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Brice Sarpi, R Zirmi, Magali Putero, M Bouslama, Anne Hémeryck, et al.. Growth, stability and decomposition of Mg 2 Si ultra-thin films on Si (100). Applied Surface Science, Elsevier, 2018, 423 (Part B), pp.522-527. 〈〉. 〈10.1016/j.apsusc.2017.09.027〉. 〈hal-01583845〉



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