Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

Stéphane Calvez 1 Pierre-François Calmon 2 Alexandre Arnoult 2 Olivier Gauthier-Lafaye 1 Chantal Fontaine 1 Guilhem Almuneau 1
1 LAAS-PHOTO - Équipe Photonique
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes [Toulouse]
Abstract : In this letter, we demonstrate that buried oxide-confined waveguides can be formed using a lateral oxidation process carried out through a discrete set of small-diameter via holes instead of the conventional scheme where the oxidation starts from the edges of etched mesas. The via-hole oxidation is shown to lead to straight waveguides with smooth oxide/semiconductor interfaces and whose propagation losses are similar to the one obtained using the standard process but with the advantage of maintaining a quasi-planar wafer surface. It thereby paves the way towards a simplification of the fabrication of III-V-semiconductor-oxide photonic devices.
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Journal articles
Optics Express, Optical Society of America, 2017, 25 (16), pp.19275 - 19275. 〈10.1364/OE.25.019275〉
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Stéphane Calvez, Pierre-François Calmon, Alexandre Arnoult, Olivier Gauthier-Lafaye, Chantal Fontaine, et al.. Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process. Optics Express, Optical Society of America, 2017, 25 (16), pp.19275 - 19275. 〈10.1364/OE.25.019275〉. 〈hal-01611629〉

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