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Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process

Abstract : In this letter, we demonstrate that buried oxide-confined waveguides can be formed using a lateral oxidation process carried out through a discrete set of small-diameter via holes instead of the conventional scheme where the oxidation starts from the edges of etched mesas. The via-hole oxidation is shown to lead to straight waveguides with smooth oxide/semiconductor interfaces and whose propagation losses are similar to the one obtained using the standard process but with the advantage of maintaining a quasi-planar wafer surface. It thereby paves the way towards a simplification of the fabrication of III-V-semiconductor-oxide photonic devices.
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Contributor : Stéphane Calvez <>
Submitted on : Friday, October 6, 2017 - 11:00:16 AM
Last modification on : Thursday, June 10, 2021 - 3:02:21 AM
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Stéphane Calvez, Pierre-François Calmon, Alexandre Arnoult, Olivier Gauthier-Lafaye, Chantal Fontaine, et al.. Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process. Optics Express, Optical Society of America - OSA Publishing, 2017, 25 (16), pp.19275 - 19275. ⟨10.1364/OE.25.019275⟩. ⟨hal-01611629⟩



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