R. Gauthier, M. Abou-khalil, K. Chatty, S. Mitra, and J. Li, Investigation of voltage overshoots in diode triggered silicon controlled rectifiers (DTSCRs) under very fast transmission line pulsing, 31st EOS/ESD Symposium, pp.1-10, 2009.

M. X. Huo, Investigation of turn-on speeds of electrostatic discharge protection devices using transmission-line pulsing technique, 2008 2nd IEEE International Nanoelectronics Conference, pp.601-606, 2008.
DOI : 10.1109/INEC.2008.4585559

M. Mergens, C. Russ, K. Verhaege, J. Armer, P. Jozwiak et al., Diode-triggered SCR (DTSCR) for RF-ESD protection of BiCMOS SiGe HBTs and CMOS ultra-thin gate oxides, IEEE International Electron Devices Meeting 2003, p.515
DOI : 10.1109/IEDM.2003.1269334

M. X. Huo, Study of turn-on characteristics of SCRs for ESD protection with TDR-O and TDR-S TLPs, 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, pp.1-8, 2010.
DOI : 10.1109/IPFA.2010.5532309

M. Bommarito, isotonic-regressions-scikit- learn, 2014.

B. J. Baliga, Fundamentals of Power Semiconductor Devices, pp.651-653, 2008.
DOI : 10.1007/978-0-387-47314-7

B. J. Baliga, Advanced High Voltage Power Device Concepts, 201127.
DOI : 10.1007/978-1-4614-0269-5

S. M. Sze, Physics of Semiconductor Devices, 1981214.
DOI : 10.1002/0470068329