Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Abstract : The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
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Microelectronics Reliability, Elsevier, 2017, 76-77, pp.500 - 506. 〈10.1016/j.microrel.2017.06.085〉
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Dernière modification le : mardi 10 juillet 2018 - 17:42:02

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François Boige, Fréféric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.500 - 506. 〈10.1016/j.microrel.2017.06.085〉. 〈hal-01643030〉

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