Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Abstract : The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
Document type :
Journal articles
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.500 - 506. 〈10.1016/j.microrel.2017.06.085〉
Liste complète des métadonnées

Cited literature [7 references]  Display  Hide  Download

https://hal.laas.fr/hal-01643030
Contributor : David Trémouilles <>
Submitted on : Tuesday, November 21, 2017 - 7:04:15 AM
Last modification on : Thursday, January 11, 2018 - 6:26:22 AM

File

Boige et al. - 2017 - Investig...
Files produced by the author(s)

Identifiers

Citation

François Boige, Fréféric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.500 - 506. 〈10.1016/j.microrel.2017.06.085〉. 〈hal-01643030〉

Share

Metrics

Record views

78

Files downloads

20