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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Abstract : The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.
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https://hal.laas.fr/hal-01643030
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Submitted on : Tuesday, November 21, 2017 - 7:04:15 AM
Last modification on : Wednesday, June 9, 2021 - 10:00:21 AM

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Boige et al. - 2017 - Investig...
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François Boige, Fréféric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, Elsevier, 2017, 76-77, pp.500 - 506. ⟨10.1016/j.microrel.2017.06.085⟩. ⟨hal-01643030⟩

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