Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

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Applied Physics Letters, American Institute of Physics, 2015, 106 (6), pp.062104. 〈10.1063/1.4908123〉
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Guillermo Ortiz, Christian Strenger, Viktoriya Uhnevionak, A Burenkov, Anton Bauer, et al.. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, American Institute of Physics, 2015, 106 (6), pp.062104. 〈10.1063/1.4908123〉. 〈hal-01659149〉

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