Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect - LAAS - Laboratoire d'Analyse et d'Architecture des Systèmes Access content directly
Journal Articles Applied Physics Letters Year : 2015

Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

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Micro and nanotechnologies/Microelectronics
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Submitted on : Friday, December 8, 2017-10:33:35 AM

Last modification on : Monday, April 17, 2023-6:32:09 PM

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hal-01659149 , version 1 (08-12-2017)

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Guillermo Ortiz, Christian Strenger, Viktoriya Uhnevionak, A Burenkov, Anton J Bauer, et al.. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, 2015, 106 (6), pp.062104. ⟨10.1063/1.4908123⟩. ⟨hal-01659149⟩

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