S. Fukuda, T. Suzuki, K. Tanaka, and . Arai, Reduction of interface-state density in 4H???SiC???n-type metal???oxide???semiconductor structures using high-temperature hydrogen annealing, Applied Physics Letters, vol.76, issue.12, p.1585, 2000.
DOI : 10.1557/PROC-572-51

S. Wang, S. Dhar, A. C. Wang, A. Ahyi, J. R. Franceschetti et al., Interface and the Effects of Nitrogen and Hydrogen, Physical Review Letters, vol.9, issue.529, p.26101, 2007.
DOI : 10.1063/1.1290490

F. Poggi, Y. Moscatelli, S. Hijikata, R. Solmi, and . Nipoti, MOS capacitors obtained by wet oxidation of n-type 4H???SiC pre-implanted with nitrogen, Microelectronic Engineering, vol.84, issue.12, p.2804, 2007.
DOI : 10.1016/j.mee.2007.01.241

K. Matocha, Solid-State Electron, p.1631, 2008.

A. Takagi, M. Toriumi, H. Iwase, and . Tango, On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration, IEEE Transactions on Electron Devices, vol.41, issue.12, p.2357, 1994.
DOI : 10.1109/16.337449

H. O. Gudjonsson, F. Olafsson, P. Allerstam, E. O. Nilsson, H. Sveinbjornsson et al., High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material, IEEE Electron Device Letters, vol.26, issue.2, p.96, 2005.
DOI : 10.1109/LED.2004.841191

H. Okamoto, K. Yano, T. Hirata, T. Hatayama, and . Fuyuki, Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide, IEEE Electron Device Letters, vol.31, issue.7, p.710, 2010.
DOI : 10.1109/LED.2010.2047239

P. Perez-tomas, P. Brosselard, J. Godignon, N. Millan, M. R. Mestres et al., Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors, Journal of Applied Physics, vol.27, issue.11, p.114508, 2006.
DOI : 10.1109/16.748868

V. Ortiz, C. Mortet, V. Strenger, J. F. Uhnevionak, A. Bobo et al., Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect, Materials Science Forum, vol.806, p.127, 2015.
DOI : 10.4028/www.scientific.net/MSF.806.127

S. M. Sze, Physics of Semiconductor Devices, 1981.