InSb Nanowires with Built-In Ga x In 1– x Sb Tunnel Barriers for Majorana Devices
Abstract
Majorana zero modes (MZMs), prime candi
dates for topological quantum bits, are
detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements.
Implementation of a
narrow and high
tunnel barrier in the next generation of Majorana devices
can help to achieve the theoretical
ly predicted quantized height of the
ZBP
.
W
e propose a
material
-
oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin
axial segment of Ga
x
In
1
-
x
Sb within an InSb nanowire. By varying the precursor molar fraction
and the grow
th time, we accurately control the composition and the length of the barriers.
The
height and the width of the
Ga
x
In
1
-
x
Sb
tunnel barrier
are
extracted from the
Wentzel
-
Kramers
-
Brillouin (
WKB
)
-
fits to the experimental
I
-
V traces