Skip to Main content Skip to Navigation
Journal articles

High-Yield Growth and Characterization of ⟨100⟩ InP p–n Diode Nanowires

Abstract : Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p–n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p–n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.
Complete list of metadata

https://hal.laas.fr/hal-01713070
Contributor : Sébastien Plissard <>
Submitted on : Tuesday, February 20, 2018 - 10:38:27 AM
Last modification on : Thursday, June 10, 2021 - 3:01:34 AM

Identifiers

Citation

Alessandro Cavalli, Jia Wang, Iman Esmaeil Zadeh, Michael Reimer, Marcel Verheijen, et al.. High-Yield Growth and Characterization of ⟨100⟩ InP p–n Diode Nanowires. Nano Letters, American Chemical Society, 2016, 16 (5), pp.3071 - 3077. ⟨10.1021/acs.nanolett.6b00203⟩. ⟨hal-01713070⟩

Share

Metrics

Record views

224