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Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System

Abstract : Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm2·V–1·s–1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb “nanosails” as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
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https://hal.laas.fr/hal-01713072
Contributor : Sébastien Plissard <>
Submitted on : Tuesday, February 20, 2018 - 10:39:15 AM
Last modification on : Wednesday, June 9, 2021 - 10:00:23 AM

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María de la Mata, Renaud Leturcq, S.R. Plissard, Chloé Rolland, Cesar Magen, et al.. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System. Nano Letters, American Chemical Society, 2016, 16 (2), pp.825 - 833. ⟨10.1021/acs.nanolett.5b05125⟩. ⟨hal-01713072⟩

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