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Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

Abstract : Designing strategies to reach monodispersity in fabrication of semiconductor nanowire ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire arrays are grown by molecular beam epitaxy with help of droplet-engineering, we observe a significant narrowing of the diameter distribution of the final nanowire array with respect to the size distribution of the initial Ga droplets. Considering that the droplet serves as a nonequilibrium reservoir of a group III metal, we develop a model that demonstrates a self-equilibration effect on the droplet size in self-catalyzed III–V nanowires. This effect leads to arrays of nanowires with a high degree of uniformity regardless of the initial conditions, while the stationary diameter can be further finely tuned by varying the spacing of the array pitch on patterned Si substrates.
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https://hal.laas.fr/hal-01713077
Contributor : Sébastien Plissard <>
Submitted on : Tuesday, February 20, 2018 - 10:42:06 AM
Last modification on : Wednesday, June 9, 2021 - 10:00:23 AM

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V. Dubrovskii, T. Xu, A. Díaz Álvarez, S.R. Plissard, P. Caroff, et al.. Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires. Nano Letters, American Chemical Society, 2015, 15 (8), pp.5580 - 5584. ⟨10.1021/acs.nanolett.5b02226⟩. ⟨hal-01713077⟩

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