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Differential hall characterization of shallow strained SiGe layers

Abstract : A Differential Hall Effect method has been developed that allows to determine of the dopant activation level of SiGe alloys in the surface region. The technique is first optimised in terms of etch rate (~ 1Å/min), surface roughness, strain and stoichiometry stability during etch. We then show that this DHE method allows to experimentally access the dopant activation of ultra-shallow surface layers of less than 0.5 nm.
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Contributor : Richard Daubriac <>
Submitted on : Tuesday, March 13, 2018 - 2:37:12 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:23 AM



Richard Daubriac, Mahmoud Abou Daher, Emmanuel Scheid, Fuccio Cristiano, S. Joblot, et al.. Differential hall characterization of shallow strained SiGe layers. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩. ⟨hal-01730652⟩



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