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High performance CMOS FDSOI devices activated at low temperature

Abstract : 3D sequential integration requires top FETs processed with a low thermal budget (500-600°C). In this work, high performance low temperature FDSOI devices are obtained thanks to the adapted extension first architecture and the introduction of mobility boosters (pMOS: SiGe 27% channel / SiGe:B 35% RSD and nMOS: SiC:P RSD). This first demonstration of n and p extension first FDSOI devices shows that low temperature activated device can match the performance of a device with state-of-the-art high temperature process (above 1000°C).
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https://hal.laas.fr/hal-01730659
Contributor : Richard Daubriac <>
Submitted on : Tuesday, March 13, 2018 - 2:40:27 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:23 AM

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L. Pasini, P. Batude, J. Lacord, M. Cassé, B. Mathieu, et al.. High performance CMOS FDSOI devices activated at low temperature. 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩. ⟨hal-01730659⟩

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