Electrical properties and non-volatile memory effect of the [Fe(HB(pz) 3 ) 2 ] spin crossover complex integrated in a microelectrode device

We report on the deposition of thin films of the [Fe(HB(pz)3)2] (pz = pyrazolyl) molecular spin crossover complex by thermal evaporation. By means of impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a first (irreversible) thermal phase change above ca. 380 K. This property can be exploited as a non-volatile (read-only) memory effect.

Domaines

Micro et nanotechnologies/Microélectronique

Fichier principal

Demont_5666.pdf (878.04 Ko)

Origine : Fichiers éditeurs autorisés sur une archive ouverte

Christophe Thibault : Connectez-vous pour contacter le contributeur

https://laas.hal.science/hal-01767507

Soumis le : mardi 25 juin 2019-15:07:11

Dernière modification le : jeudi 11 avril 2024-13:08:11

Dates et versions

hal-01767507 , version 1 (25-06-2019)

Identifiants

HAL Id : hal-01767507 , version 1
DOI : 10.1063/1.3616147

Citer

Tarik Mahfoud, Gábor Molnár, Saioa Cobo, Lionel Salmon, Christophe Thibault, et al.. Electrical properties and non-volatile memory effect of the [Fe(HB(pz) 3 ) 2 ] spin crossover complex integrated in a microelectrode device. Applied Physics Letters, 2011, 99 (5), pp.053307-1-053307-3. ⟨10.1063/1.3616147⟩. ⟨hal-01767507⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

IRD UNIV-TLSE2 CNRS INSA-TOULOUSE LAAS UT1-CAPITOLE LCC LAAS-NBS LAAS-MICRO-NANO-BIO-TECHNOLOGIES INC-CNRS LAAS-ELIA INSA-GROUPE TOULOUSE-INP UNIV-UT3 UT3-TOULOUSEINP CIRIMAT

83 Consultations

8 Téléchargements