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Scanning microwave microscopy applied to semiconducting GaAs structures

Abstract : A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.
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https://hal.laas.fr/hal-01780256
Contributor : Guilhem Almuneau <>
Submitted on : Friday, April 27, 2018 - 1:03:32 PM
Last modification on : Thursday, June 11, 2020 - 5:04:07 PM

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Arne Buchter, Johannes Hoffmann, Alexandra Delvallée, Enrico Brinciotti, Dimitri Hapiuk, et al.. Scanning microwave microscopy applied to semiconducting GaAs structures. Review of Scientific Instruments, American Institute of Physics, 2018, 89 (2), pp.023704. ⟨10.1063/1.5015966⟩. ⟨hal-01780256⟩

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