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Nanosecond laser defects induced in crystalline silicon annealed: identification, localization and electrical impact

Abstract : Laser Thermal Annealing (LTA) in conjunction with ion implantation has been demonstrated to be a very effective method to achieve heavily doped and localized regions needed in both advanced MOSFET and solar cells technology. In some cases, degradation of the electrical properties of the laser doped regions has been reported, including increased leakage current in p-n junctions, reduced carrier mobility and breakdown voltage shift in MOS transistors or reduced carrier lifetime in solar cells, which are attributed to laser-induced damage, including impurity penetration during anneal or point defect generation during melt recrystallization. In this work, we present a comprehensive investigation of laser induced damage by implementing a methodology allowing the identification and the localization of the defects as well as the investigation of their impact on the properties of the annealed regions.
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https://hal.laas.fr/hal-01803955
Contributor : Richard Monflier <>
Submitted on : Monday, June 11, 2018 - 5:16:59 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:23 AM
Long-term archiving on: : Wednesday, September 12, 2018 - 10:55:01 PM

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  • HAL Id : hal-01803955, version 1

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Richard Monflier, H Rizk, Toshiyuki Tabata, Julien Roul, Éric Imbernon, et al.. Nanosecond laser defects induced in crystalline silicon annealed: identification, localization and electrical impact. 22nd International Conference on Ion Implantation Technology , Sep 2018, Würzburg, Germany. pp.1. ⟨hal-01803955v1⟩

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