T. Sarnet, M. Hernandez, and D. Débarre, Dopage laser en microélectronique, Journal de Physique IV (Proceedings), vol.138, issue.1, pp.203-212, 2006.
DOI : 10.1051/jp4:2006138023

URL : http://jp4.journaldephysique.org/10.1051/jp4:2006138023/pdf

K. Huet, F. Mazzamuto, T. Tabata, I. Toqué-tresonne, and Y. Mori, Doping of semiconductor devices by Laser Thermal Annealing, Materials Science in Semiconductor Processing, vol.62, pp.92-102, 2017.

P. Gundel, D. Suwito, U. Jager, F. D. Heinz, W. Warta et al., Comprehensive Microscopic Analysis of Laser-Induced High Doping Regions in Silicon, IEEE Transactions on Electron Devices, vol.58, issue.9, pp.2874-2877, 2011.

V. Privitera, Integration of Melting Excimer Laser Annealing in Power MOS Technology, IEEE Transactions on Electron Devices, vol.54, issue.4, pp.852-860, 2007.

M. Ametowobla, G. Bilger, J. R. Köhler, and J. H. Werner, Laser induced lifetime degradation in p-type crystalline silicon, Journal of Applied Physics, vol.111, issue.11, p.114515, 2012.

Y. Han, E. Franklin, A. Fell, M. Ernst, H. T. Nguyen et al., Low-temperature micro-photoluminescence spectroscopy on laser-doped silicon with different surface conditions, Applied Physics A, vol.122, issue.4, pp.1-10, 2016.

H. T. Nguyen, Y. Han, M. Ernst, A. Fell, E. Franklin et al., Dislocations in laser-doped silicon detected by microphotoluminescence spectroscopy, Applied Physics Letters, vol.107, issue.2, p.22101, 2015.

N. A. Drozdov, A. A. Patrin, and V. T. Tkachev, Modification of the Dislocation Luminescence Spectrum by Oxygen Atmospheres in Silicon, phys. stat. sol (a), vol.64, pp.63-65, 1981.

J. Mooney and P. Kambhampati, Get the Basics Right: Jacobian Conversion of Wavelength and Energy Scales for Quantitative Analysis of Emission Spectra, The Journal of Physical Chemistry Letters, vol.4, issue.19, pp.3316-3318, 2013.

M. Tajima, H. Kiuchi, F. Higuchi, and A. Ogura, Quantification of C in Si by photoluminescence at liquid N temperature after electron irradiation, Applied Physics Express, vol.10, issue.4, p.46602, 2017.

A. Lazrak, Etude par photoluminescence des centres associés à l'oxygène et au carbone dans le silicium, 1984.

N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, Recombination radiation on dislocations in silicon, Journal of Experimental and Theoretical Physics Letters, vol.23, p.597, 1976.

V. V. Kveder, E. A. Steinman, and H. G. Grimmeiss, Photoluminescence studies of relaxation processes in strained Si1-x Ge x /Si epilayers, J. Appl. Phys, vol.78, pp.446-450, 1995.

I. Tarasov, S. Ostapenko, C. Hassler, and E. U. Reisner, Spatially resolved defect diagnostics in multicrystalline silicon for solar cells, Mater. Sci. Eng, vol.71, pp.51-55, 2000.

S. Ostapenko, I. Tarasov, J. P. Kalejs, E. U. Hassler, and . Reisner, Defect monitoring using scanning photoluminescence spectroscopy in multicrystalline silicon wafers, Semicond. Sci. Technol, vol.15, pp.840-848, 2002.

S. Pizzini, M. Guzzi, E. Grilli, and G. Borionetti, The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon, J. Phys.: Condens. Matter, vol.12, pp.10131-10143, 2000.

R. Sauer, J. Weber, J. Stolz, E. R. Weber, K. Küsters et al., Dislocation-related photoluminescence in silicon, Applied Physics A, vol.36, issue.1, pp.1-13, 1985.

V. P. Tolstoy, I. V. Chernyshova, and V. A. Skryshevsky, Handbook of Infrared Spectroscopy of Ultrathin Films, 2003.

Y. Yatsurugi, Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon, J. Electrochem. Soc, vol.120, pp.975-979, 1973.