Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameters
Abstract
The crystallographic anisotropy of the lateral selective thermal oxidation of
AlGaAs alloys is experimentally studied. The anisotropic behavior of this oxidation process,
used primarily for building a lateral confinement in vertical surface emitting lasers (VCSEL),
is quantified by varying different process parameters and the geometrical shapes of laterally
oxidized mesa structures. This experimental study aims to have a better control of the oxide
aperture shape used in oxide-confined photonics devices.
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