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Modeling of microfluidically tuned capacitor for RF applications

Abstract : This paper presents the modeling of microfluidically tuned capacitor for RF applications. The designed structure is based on performances variations following DI water displacement between capacitor's electrodes. We have modeled the electric field and the current distribution using FEM tool for different DI water position in microchannels. The obtained results at 4.5 GHz show an important variation of electric field and current distribution that impacts the capacitor performances: the capacitance value is comprised between Cmin = 0.11 pF and Cmax = 5.76 pF, the factor value decreases from Qmax = 84.27 to Qmin = 3.99, and the resonant frequency ranges from 5.67 GHz to 19.8 GHz. Indeed, the capacitance variation reaches Tr = 5136% and the broadband ability is higher than 240%.
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https://hal.laas.fr/hal-01838593
Contributor : Pons Patrick <>
Submitted on : Friday, July 13, 2018 - 2:34:43 PM
Last modification on : Tuesday, October 20, 2020 - 6:48:06 PM
Long-term archiving on: : Monday, October 15, 2018 - 9:30:44 AM

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  • HAL Id : hal-01838593, version 1

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Nizar Habbachi, Hatem Boussetta, Mohamed Kallala, Ali Boukabache, Patrick Pons, et al.. Modeling of microfluidically tuned capacitor for RF applications. IEEE International Multi-Conference on Systems, Signals & Devices (SSD'18), Mar 2018, Hammamet, Tunisia. 5p. ⟨hal-01838593⟩

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