Design, realization and characterization of silicon nanowire ion sensitive field effect transistors
Résumé
The aim of our research project is to achieve a potentiometric multi-sensor platform, consisting of ion sensitive field effect transistors ISFET and MOSFET, which channel is a nanowire or a network of horizontal Silicon nanowires and whose gate insulator is alumina Al2O3 deposed by Atomic Layer deposition ALD. This microdevice will provide chemical and biological analyses in the liquid phase, in microfluidic channels.
Origine : Fichiers produits par l'(les) auteur(s)
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