AlGaN/GaN-based HEMTs failure physics and reliability: mechanisms affecting gate edge and Schottky junction, IEEE Trans. On Electron Devices, vol.60, issue.10, pp.3119-3129, 2013. ,
DOI : 10.1109/ted.2013.2271954
Understanding imperfections in GaN HEMTS, 2014. ,
RF power degradation of GaN High Electron Mobility Transistors, IEEE International Electron Device Meeting, IEDM 2010, pp.468-471 ,
DOI : 10.1109/iedm.2010.5703397
URL : http://www-mtl.mit.edu/%7Ealamo/pdf/2010/RC-183.pdf
Lifetime GaN HEMTs with multiple degradation mechanisms, IEEE Trans. On Device and Materials Reliability, vol.15, issue.4, pp.486-494, 2015. ,
DOI : 10.1109/tdmr.2015.2474359
URL : http://doi.org/10.1109/tdmr.2015.2474359
Ageing of GaN HEMT devices: which degradation indicators?, Journal of Semiconductors, vol.37, issue.1, p.14001, 2016. ,
DOI : 10.1088/1674-4926/37/1/014001
URL : https://hal.archives-ouvertes.fr/hal-01740848
Understanding Imperfections in GaN HEMTs" presented at CS Mantech, 2014. ,
Diagnostic Tools For Accurate Reliability Investigations of GaN Devices, 21 th International Conference on Noise and Fluctuations (ICNF 2011), p.6, 2011. ,
DOI : 10.1109/icnf.2011.5994367
URL : https://hal.archives-ouvertes.fr/hal-00907447
, Reliability issues of Gallium Nitride High Electron Mobility Transistors, pp.39-50, 2010.
DOI : 10.1017/s1759078710000097
AlGAN/GaN HFET Reliability, IEEE Microwave Magazine, pp.116-127, 2009. ,
DOI : 10.1109/mmm.2009.932286
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies, Microelectronics Reliability, vol.55, pp.1714-1718, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01234080
Generationrecombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: impact of HTRB stress on short term and long term memory effects, International Wireless Symposium, IWS 2013, p.4 ,
InAlN/GaN HEMT technology for robust HF receivers: an overview of the HF and LF noise performances, 23 th International Conference on Noise and Fluctuations, p.4, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01234023
I-DLTS, electrical lag and low frequency noise measurements of trapping effects in AlGaN/GaN HEMT for reliability studies, European Microwave Conference, p.4, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-01343977
Analysis and path localization of gate current in AlGaN/GaN HEMT using low frequency noise measurements and optical beam induced resistance change technique, International Microwave Symposium IMS 2013, p.4 ,
DOI : 10.1109/mwsym.2013.6697490
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors, Microelectronics Reliability, vol.55, pp.1703-1707, 2015. ,
DOI : 10.1016/j.microrel.2015.06.074
URL : https://hal.archives-ouvertes.fr/hal-01230925
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Heigh, electrical modelling, T-CAD simulations and TEM imaging, Microelectronics Reliability, pp.344-349, 2017. ,
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices, Microelectronics Reliability, pp.350-356, 2017. ,
DOI : 10.1016/j.microrel.2017.07.049
On conduction mechanisms through SiN/AlGaN based gate dielectric and assessment of intrinsic reliability, IEEE International Reliability Physics Symposium, p.5, 2016. ,
DOI : 10.1109/irps.2016.7574585
A review on the physical mechanisms that limit the reliability of GaN-based LEDs, IEEE Trans. On Electron Devices, vol.57, issue.1, pp.108-118, 2010. ,
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test, Microelectronics Reliability, vol.52, pp.2184-2187, 2012. ,
DOI : 10.1016/j.microrel.2012.06.100
URL : https://hal.archives-ouvertes.fr/hal-01002539