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A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance

Abstract : Despite their potential in the field of power electronics, many reliability issues still affect the electrical performance of Gallium Nitride HEMT power devices and require an effort of analysis and understanding. The characterization of the on-state resistance of this transistor is necessary to understand the dynamics of some phenomena such as trapping. The degradation of this resistance has always been related to traps in the 2DEG channel, without taking into consideration possible contributions from the source and drain contacts (metal/ semiconductor). In this work, resistance measurements, with and without ultraviolet illumination, are performed on three different technological options to highlight the effect of illumination on contact resistances.
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https://hal.laas.fr/hal-01893190
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Submitted on : Thursday, October 18, 2018 - 1:29:57 PM
Last modification on : Friday, January 10, 2020 - 9:10:09 PM
Long-term archiving on: : Saturday, January 19, 2019 - 12:12:50 PM

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Dany Hachem, David Trémouilles, Frédéric Morancho, Gaëtan Toulon. A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.406-410. ⟨10.1016/j.microrel.2018.07.119⟩. ⟨hal-01893190⟩

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