Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

Abstract : The GaN-based flip-chip white light-emitting diodes (FCWLEDs) with diffused ZnO nanorod reflector and with ZnO nanorod antireflection layer were fabricated. The ZnO nanorod array grown using an aqueous solution method was combined with Al metal to form the diffused ZnO nanorod reflector. It could avoid the blue light emitted out from the Mg-doped GaN layer of the FCWLEDs, which caused more blue light emitted out from the sapphire substrate to pump the phosphor. Moreover, the ZnO nanorod array was utilized as the antireflection layer of the FCWLEDs to reduce the total reflection loss. The light output power and the phosphor conversion efficiency of the FCWLEDs with diffused nanorod reflector and 250 nm long ZnO nanorod antireflection layer were improved from 21.15 mW to 23.90 mW and from 77.6% to 80.1% in comparison with the FCWLEDs with diffused nanorod reflector and without ZnO nanorod antireflection layer, respectively.
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Article dans une revue
Journal of Nanomaterials, Hindawi Publishing Corporation, 2014, 2014, pp.1 - 6 ; Article ID 987479. 〈10.1155/2014/987479〉
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Contributeur : Véronique Bardinal <>
Soumis le : mercredi 28 novembre 2018 - 14:25:26
Dernière modification le : lundi 3 décembre 2018 - 16:59:03

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Hsin-Ying Lee, Yu-Chang Lin, Yu-Ting Su, Chia-Hsin Chao, Véronique Bardinal. Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer. Journal of Nanomaterials, Hindawi Publishing Corporation, 2014, 2014, pp.1 - 6 ; Article ID 987479. 〈10.1155/2014/987479〉. 〈hal-01922240〉

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