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Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach

Youssouf Guerfi 1 Jean-Baptiste Doucet 2 Guilhem Larrieu 1
1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Three-dimensional (3D) nanostructures are emerging as promising building blocks for a large spectrum of applications. One critical issue in integration regards mastering the thin, flat, and chemically stable insulating layer that must be implemented on the nanostructure network in order to build striking nano-architectures. In this letter, we report an innovative method for nanoscale planarization on 3D nanostructures by using hydrogen silesquioxane as a spin-on-glass (SOG) dielectric material. To decouple the thickness of the final layer from the height of the nanostructure, we propose to embed the nanowire network in the insulator layer by exploiting the planarizing properties of the SOG approach. To achieve the desired dielectric thickness, the structure is chemically etched back with a highly diluted solution to control the etch rate precisely. The roughness of the top surface was less than 2 nm. There were no surface defects and the planarity was excellent, even in the vicinity of the nanowires. This newly developed process was used to realize a multilevel stack architecture with sub-deca-nanometer-range layer thickness.
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https://hal.laas.fr/hal-01942316
Contributor : Guilhem Larrieu <>
Submitted on : Monday, December 3, 2018 - 10:20:33 AM
Last modification on : Thursday, June 10, 2021 - 3:05:45 AM

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Youssouf Guerfi, Jean-Baptiste Doucet, Guilhem Larrieu. Thin-dielectric-layer engineering for 3D nanostructure integration using an innovative planarization approach. Nanotechnology, Institute of Physics, 2015, 26 (42), pp.425302. ⟨10.1088/0957-4484/26/42/425302⟩. ⟨hal-01942316⟩

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