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Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi

Abstract : The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.
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Submitted on : Monday, February 4, 2019 - 1:41:46 PM
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Simone Mazzucato, Henri Lehec, Hélène Carrère, Hajer Makhloufi, Alexandre Arnoult, et al.. Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi. Nanoscale Research Letters, SpringerOpen, 2014, 9 (19), ⟨10.1186/1556-276X-9-19⟩. ⟨hal-01943032⟩



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