Z. Chine, H. Fitouri, I. Zaied, A. Rebey, and J. El, B: Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy, Semicond Sci Technol, vol.25, p.6, 2010.

S. Imhof, A. Thränhardt, A. Chernikov, M. Koch, N. S. Köster et al., Clustering effects in Ga(AsBi), Appl Phys Lett, vol.96, p.13, 2010.
DOI : 10.1063/1.3374884

H. Tong, X. Marie, and M. W. Wu, Electron spin relaxation in GaAS 1-x Bi x Effects of spin-orbit tuning by Bi incorporation, J Appl Phys, vol.112, p.6, 2012.

F. Sarcan, O. Donmez, M. Gunes, A. Erol, M. C. Arikan et al., An analysis of Hall mobility in asgrown and annealed n-and p-type modulation-doped GaInNAs/GaAs quantum wells, Nanoscale Res Lett, vol.7, p.1, 2012.

Z. Batool, K. Hild, T. Hosea, X. Lu, T. Tiedje et al., The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing, J Appl Phys, vol.111, p.11, 2012.

R. N. Kini, A. J. Ptak, B. Fluegel, R. France, R. C. Reedy et al., Effect of Bi alloying on the hole transport in the dilute bismide alloy GaAS 1-x Bi x, Phys Rev B, pp.83-90, 2011.

X. Lu, A. D. Beaton, R. B. Lewis, T. Tiedje, and M. B. Whitwick, Effect of molecular beam epitaxy growth conditions on the Bi content of GaAS 1-x Bi x, Appl Phys Lett, vol.92, p.19, 2008.

K. Alberi, O. D. Dubon, W. Walukiewicz, K. M. Yu, K. Bertulis et al., Valence band anticrossing in GaAS 1-x Bi x, Appl Phys Lett, vol.91, p.5, 2007.
DOI : 10.1063/1.2768312
URL : https://digital.library.unt.edu/ark:/67531/metadc933216/m2/1/high_res_d/950977.pdf

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk et al., Band gap of GaAS 1-x Bi x , 0<x<3.6%, Appl Phys Lett, vol.82, p.22, 2003.

S. Mazzucato, P. Boonpeng, H. Carrère, D. Lagarde, A. Arnoult et al., Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence, Semicond Sci Technol, vol.28, issue.2, 2013.
URL : https://hal.archives-ouvertes.fr/hal-02050522

S. Mazzucato, R. J. Potter, A. Erol, N. Balkan, P. R. Chalker et al., S-shaped behaviour of the temperature-dependent energy band gap in dilute nitrides, Phys E Low-dimensional Syst Nanostructures, vol.17, p.242, 2003.

A. R. Mohmad, F. Bastiman, C. F. Hunter, J. S. Ng, S. J. Sweeney et al., The effect of Bi composition to the optical quality of GaAs 1-x Bi x, Appl Phys Lett, vol.99, p.4, 2011.

L. Malikova, F. H. Pollak, and R. Bhat, Composition and temperature dependence of the direct band gap of GaAs 1-x N x (0?x?0.0232) using contactless electroreflectance, J Elec Mat, vol.27, p.5, 1998.

Y. P. Varshni, Temperature dependence of the energy gap in semiconductor, vol.34, p.149, 1967.

S. Q. Wang and H. Q. Ye, First-principles study on elastic properties and phase stability of III-V compounds, Phys Stat Sol, vol.240, p.1, 2003.
DOI : 10.1002/pssb.200301861

R. Pa, Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors, Phys Stat Sol, vol.216, p.975, 1999.

R. B. Lewis, M. Masnadi-shirazi, and T. Tiedje, Growth of high Bi concentration GaAS1-xBixby molecular beam epitaxy, Appl Phys Lett, vol.101, p.82112, 2012.
DOI : 10.1063/1.4748172

H. Fitouri, I. Moussa, A. Rebey, E. Jani, and B. , Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction, Microelectron Eng, vol.88, p.4, 2011.

P. Verma, K. Oe, M. Yamada, H. Harima, M. Herms et al., Raman studies on GaAs 1-x Bi x and InAs 1-x Bi x, J Appl Phys, vol.89, p.3, 2001.
DOI : 10.1063/1.1336561

M. J. Seong, S. Francoeur, S. Yoon, A. Mascarenhas, S. Tixier et al., Bi-induced vibrational modes in GaAsBi, Superlatt Microstruct, vol.37, p.394, 2005.
DOI : 10.1016/j.spmi.2005.02.004

I. Markov, Kinetics of surfantant-mediated epitaxial growth, Phys Rev B, vol.50, p.15, 1994.

M. R. Pillai, S. S. Kim, S. T. Ho, and S. A. Barnett, Growth of In x Ga 1-x As/GaAs heterostructures using Bi as a surfactan, J Vac Si Technol B, vol.18, p.3, 2000.

S. Tixier, M. Adamcyk, E. C. Young, J. H. Schmid, and T. Tiedje, Surfactant enhanced growth of GaNAs and InGaNAs using bismuth, J Crytal Growth, vol.251, p.449, 2003.
DOI : 10.1016/s0022-0248(02)02217-0

H. Ye, Y. Song, Y. Gu, and S. Wang, Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 ?m, AIP Advance, vol.2, p.42158, 2012.
DOI : 10.1063/1.4769102
URL : https://doi.org/10.1063/1.4769102