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Electron g-factor in strained bulk GaAsBi epilayers

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https://hal.laas.fr/hal-01947298
Contributor : Chantal Fontaine <>
Submitted on : Thursday, December 6, 2018 - 4:16:11 PM
Last modification on : Monday, October 5, 2020 - 2:25:18 PM

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  • HAL Id : hal-01947298, version 1

Citation

Simone Mazzucato, H Lehec, T.T. Zhang, Hélène Carrère, Delphine Lagarde, et al.. Electron g-factor in strained bulk GaAsBi epilayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. ⟨hal-01947298⟩

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