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Conference Papers Year : 2014

Electron g-factor in strained bulk GaAsBi epilayers

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hal-01947298 , version 1 (06-12-2018)

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  • HAL Id : hal-01947298 , version 1

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Simone Mazzucato, Henri Lehec, Tiantian Zhang, Hélène Carrère, Delphine Lagarde, et al.. Electron g-factor in strained bulk GaAsBi epilayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. ⟨hal-01947298⟩
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