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Electron g-factor in strained bulk GaAsBi epilayers

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https://hal.laas.fr/hal-01947298
Contributor : Chantal Fontaine <>
Submitted on : Thursday, December 6, 2018 - 4:16:11 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:24 AM

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  • HAL Id : hal-01947298, version 1

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Simone Mazzucato, Henri Lehec, Tiantian Zhang, Hélène Carrère, Delphine Lagarde, et al.. Electron g-factor in strained bulk GaAsBi epilayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. ⟨hal-01947298⟩

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