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Carrier localization and electron spin relaxation dynamics in GaAsBi

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https://hal.laas.fr/hal-01947332
Contributor : Chantal Fontaine <>
Submitted on : Thursday, December 6, 2018 - 4:35:49 PM
Last modification on : Wednesday, June 9, 2021 - 10:00:24 AM

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  • HAL Id : hal-01947332, version 1

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Simone Mazzucato, Henri Lehec, Hélène Carrère, Tiantian Zhang, Delphine Lagarde, et al.. Carrier localization and electron spin relaxation dynamics in GaAsBi. 5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland. ⟨hal-01947332⟩

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