Carrier localization and electron spin relaxation dynamics in GaAsBi - Archive ouverte HAL Access content directly
Conference Papers Year : 2014

Carrier localization and electron spin relaxation dynamics in GaAsBi

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Materials Engineering Sciences [physics] Optics / Photonic

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https://hal.laas.fr/hal-01947332

Submitted on : Thursday, December 6, 2018-4:35:49 PM

Last modification on : Friday, March 3, 2023-3:40:48 AM

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hal-01947332 , version 1 (06-12-2018)

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  • HAL Id : hal-01947332 , version 1

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Simone Mazzucato, Henri Lehec, Hélène Carrère, Tiantian Zhang, Delphine Lagarde, et al.. Carrier localization and electron spin relaxation dynamics in GaAsBi. 5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland. ⟨hal-01947332⟩

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