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Optimisation de la diode à Superjonction à tranchées profondes pour des applications à 600V

Abstract : The purpose of this paper is to present the Deep Trench SuperJunction Diode (DT-SJDiode) optimization and realization with a 600V breakdown voltage. We present technological and geometrical parameters influences on the breakdown voltage with simulations performed with Sentaurus TCAD. Previous works allowed to validate some critical technological process steps and to create a technological process for 1200V breakdown voltage applications. The main point here is to optimize those process steps (trench verticality, termination fulfilling...), which have an important influence on the electrical properties, in order to fabricate a 600V breakdown voltage DT-SJDiode.
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https://hal.laas.fr/hal-01955633
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Submitted on : Friday, December 14, 2018 - 2:51:17 PM
Last modification on : Thursday, June 10, 2021 - 3:02:22 AM
Long-term archiving on: : Friday, March 15, 2019 - 2:53:53 PM

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Sylvain Noblecourt, Josiane Tasselli, Frédéric Morancho, Karine Isoird, Patrick Austin, et al.. Optimisation de la diode à Superjonction à tranchées profondes pour des applications à 600V. European Journal of Electrical Engineering, Lavoisier, 2014, 17 (5-6), pp.345-361. ⟨10.3166/ejee.17.345-361⟩. ⟨hal-01955633⟩

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