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DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs

Abstract : A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based on TCAD numerical simulations (with Sentaurus Device), non-local tunneling under the Schottky gate is necessary to reproduce the measured transfer characteristics in a subthreshold regime. Once the trap concentration and distribution are determined in the device, the resulting gate leakage current is modeled making use of Verilog-A, for typical operation regimes.
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Submitted on : Friday, December 14, 2018 - 3:04:08 PM
Last modification on : Thursday, June 10, 2021 - 3:03:09 AM

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Raul Rodriguez, Benito González, Javier Garcia, Gaëtan Toulon, Frédéric Morancho, et al.. DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs. Electronics, MDPI, 2018, 7 (10), pp.210. ⟨10.3390/electronics7100210⟩. ⟨hal-01955666⟩

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