30 nm Normally off enhancement mode AlGaN/GaN HEMT on SiC substrate for future high speed nanoscale power applications, Proceedings of the 2017 International Conference on Innovations in Electrical, Electronics, Instrumentation and Media Technology (ICEEIMT), pp.293-296, 2017. ,
Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs, Proceedings of the 2010 International Electron Devices Meeting, 2010. ,
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives, IEEE Trans. Device Mater. Reliab, vol.8, pp.332-343, 2008. ,
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices, Microelectron. Reliab, pp.350-356, 2017. ,
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements, IEEE Trans. Electron Devices, vol.60, pp.3166-3175, 2013. ,
Deep Levels Characterization in GaN HEMTs-Part II: Experimental and Numerical Evaluation of Self-Heating Effects on the Extraction of Traps Activation Energy, IEEE Trans. Electron Devices, vol.60, pp.3176-3182, 2013. ,
Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures, Proceedings of the 2015 IEEE International Electron Devices Meeting (IEDM), 2015. ,
Fowler-Nordheim Tunneling into Thermally Grown SiO 2, J. Appl. Phys, vol.40, 1969. ,
Modelling of Interface Carrier Transport for Device Simulation, 1994. ,
Numerical Analysis of Poly-TFTs Under Off Conditions. Solid-State Electron, vol.41, pp.627-633, 1997. ,
A Model for the Field and Temperature Dependence of Shockley-Read-Hall Lifetimes in Silicon. Solid-State Electron, vol.35, pp.1585-1596, 1992. ,
Mechanism of surface conduction in the vicinity of Schottky gates on heterostructures, Appl. Phys. Lett, vol.91, p.93501, 2007. ,
Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls, IEEE Trans. Electron Devices, vol.63, pp.1444-1449, 2016. ,
Scalable normally-off AlGaN/GaN HEMT using fluorine implantation below the channel, Proceedings of the Symposium de Gènie Electrique (SGE 2014), pp.8-10, 2014. ,
Adesida, I. Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition, Appl. Phys. Lett, vol.82, pp.1562-1564, 2003. ,
Optimization of AlGaN/GaN HEMT Schottky contact for microwave applications, Proceedings of the 2012 7th European Microwave Integrated Circuit Conference, vol.29, pp.119-122, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-00814976
Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors, Proceedings of the 2008 IEEE International Electron Devices Meeting, pp.15-17, 2008. ,
Mechanisms for Electrical Degradation of GaN High-electron Mobility Transistors, Proceedings of the 2006 IEEE International Electron Devices Meeting, pp.11-13, 2006. ,
Physics of electrical degradation in GaN high electron mobility transistors, 2009. ,
Sentaurus device user guide, 2017. ,
Electrothermal DC characterization of GaN on Si MOS-HEMTs. Solid-State Electron, vol.137, pp.44-51, 2017. ,
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, J. Appl. Phys, vol.87, pp.334-344, 2000. ,
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling, IEEE Trans. Electron Devices, vol.60, pp.3157-3165, 2013. ,
, Physics of Semiconductor Devices, 1981.
Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs, IEEE Trans. Electron Devices, vol.62, pp.443-448, 2015. ,
Compact Charge-Based Physical Models for Current and Capacitances in AlGaN/GaN HEMTs, IEEE Trans. Electron Devices, vol.60, pp.3746-3752, 2013. ,
Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials, Phys. Status Solidi A Appl. Mater, vol.212, pp.1130-1136, 2015. ,
Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method, IEEE Trans. Electron Devices, vol.49, pp.1496-1498, 2002. ,
New Concepts for Normally-Off Power Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT), 2014. ,
URL : https://hal.archives-ouvertes.fr/tel-01132563
Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters, Proceedings of the 2015 International Semiconductor Conference (CAS), pp.211-214, 2015. ,
Gate Leakage Current in GaN HEMT's: A Degradation Modeling Approach, Electr. Electron. Eng, vol.2, pp.397-402, 2012. ,
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs. Solid-State Electron, vol.132, pp.64-72, 2017. ,