Z. Fang, AIP Proc, vol.06, p.249, 2006.

S. Qin, IEEE Trans. on Electron Devices, vol.54, issue.9, p.2497, 2007.

S. Qin, Ion Implantation Technology International Conference) school book, chapter 15: Plasma Immersion Ion Implantation, 2014.

F. Torregrosa, Recent developments on PULSIONs PIII tool : FinFET 3D doping, High temp implantation, III-V doping, contact and silicide improvement, & 450 mm Invited talk IWJT, 2015.

F. Milesi, , 2016.

S. Qin, Performance Evaluation of CMOS Devices Fabricated by PIII/PLAD Doping of Poly-Si Gates, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 2007.

S. Qin, IEEE Workshp on Microelectonics and Devices

S. Nizou, Deep Trench doping by plasma immersion ion implantation in silicon, 16th International conference on Ion Implantation Technology, pp.229-232, 2006.

M. Mori, A Trench-Gate High-Conductivity IGBT(HiGT) With Short-Circuit Capability, IEEE Electron Devices, vol.54, issue.8, 2007.

S. Noblecourt, Design and realization of deep trench superjunction diode for 600V applications, European Journal of Electrical Engineering (EJEE), vol.17, pp.345-361, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01955633

T. Hiyoshi, SiC High Channel Mobility MOSFET. SEI technical review, vol.77, pp.122-125, 2013.

L. Via and F. , Structural and electrical characterisation of titanium and nickel silicide contacts on silicon carbide MRS Online Proceeding Library Archive, vol.60, pp.269-282, 2002.

S. Hamady, P-doped region below the AlGaN/GaN interface for normally-off HEMT, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01108922

J. A. Borders, Applied Physics Letters, vol.18, 1971.

K. Kh and . Nussupov, Physics of the Solid State, vol.56, p.2307, 2014.

M. Zielinski, Novel Carbon Treatment to Create an Oriented 3CSiC Seed on Silicon