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Normally-Off AlGaN/GaN HEMT using fluorine implantation below the channel

Abstract : AlGaN/GaN HEMTs are very promising candidates for high frequency applications with high power and low noise. Unfortunately, while switching applications strongly demand normally-off operation, conventional HEMTs are normally-on. For the sake of achieving normally-off HEMTs, several structures have been proposed. One of the major normally-off HEMTs uses fluorine implantation in the AlGaN layer. We suggest in this work the implantation of fluorine ions under the AlGaN/GaN interface only below the gate electrode rather than implanting in the AlGaN layer. Simulation results show that the proposed method is capable of achieving normally-off operation and more effective when it comes to the fluorine concentration required to obtain the desired threshold voltage. Neither the vertical breakdown voltage, nor the off-state current are affected by this approach.
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https://hal.laas.fr/hal-01955720
Contributor : Frédéric Morancho <>
Submitted on : Friday, December 14, 2018 - 3:23:29 PM
Last modification on : Thursday, June 10, 2021 - 3:05:46 AM
Long-term archiving on: : Friday, March 15, 2019 - 3:21:14 PM

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  • HAL Id : hal-01955720, version 1

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Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Normally-Off AlGaN/GaN HEMT using fluorine implantation below the channel. Symposium en Génie Electrique 2014 (SGE 2014), Jul 2014, Cachan, France. ⟨hal-01955720⟩

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