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Thickness limitation of band to band tunneling process in InGaAs/GaAsSb type-II tunnel junctions designed for multijunction solar cells

Abstract : This article reports on the impact of the thickness and/or the composition on the performance of type-II n+ InGaAs/p+ GaAsSb tunnel junctions. The InGaAs/GaAsSb staggered band-offset heterojunction is expected to improve tunneling properties. Devices have been grown by molecular beam epitaxy with various thicknesses and/or Sb and In concentrations. For thin elastically strained type-II tunnel junctions, the electrical characteristics exhibit degraded transport performances compared to the reference p+ GaAs/n+ GaAs tunnel junction structures, while much better tunneling peak currents are achieved with strain-relaxed thick type-II tunnel junctions. Based on a theoretical analysis of the local density of states and the band-edges profiles of the type-II tunnel junctions, we propose a suitable design for type-II tunnel junctions with high tunneling current density toward their use in multi-junction solar cells.
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https://hal.laas.fr/hal-01968187
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Submitted on : Wednesday, January 2, 2019 - 11:21:59 AM
Last modification on : Monday, February 10, 2020 - 6:12:35 PM
Long-term archiving on: : Wednesday, April 3, 2019 - 3:27:15 PM

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Kevin Louarn, Y Claveau, Chantal Fontaine, Alexandre Arnoult, Ludovic Marigo-Lombart, et al.. Thickness limitation of band to band tunneling process in InGaAs/GaAsSb type-II tunnel junctions designed for multijunction solar cells. ACS Applied Energy Materials, ACS, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩. ⟨hal-01968187⟩

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