F. Dimroth, T. N. Tibbits, M. Niemeyer, F. Predan, P. Beutel et al., Four-Junction Wafer-Bonded Concentrator Solar, Wiemer, M. Highefficiency multijunction solar cells employing dilute nitrides AIP Conference Proceedings, vol.6, pp.14-19, 2012.

J. F. Geisz, S. Kurtz, M. W. Wanlass, J. S. Ward, A. Duda et al., High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction, Appl. Phys. Lett, p.23502, 2007.

W. Guter and A. W. Bett, I-V Characterization of Tunnel Diodes and Multijunction Solar Cells, IEEE Trans. Electron Devices, vol.53, pp.2216-2222, 2006.

J. E. Northrup and S. B. Zhang, Dopant and defect energetics: Si in GaAs, Phys. Rev. B, vol.47, pp.6791-6794, 1993.

J. H. Neave, P. J. Dobson, J. J. Harris, P. Dawson, and B. A. Joyce, Silicon doping of MBE-grown GaAs films, Appl. Phys. A, vol.32, pp.195-200, 1983.

I. García, I. Rey-stolle, and C. Algora, Performance analysis of AlGaAs/GaAs tunnel junctions for ultrahigh concentration photovoltaics, J. Phys. D: Appl. Phys, p.45101, 2012.

K. Köhler, P. Ganser, M. Maier, S. Ahmed, M. R. Melloch et al., Comparison of Si ?-doping with homogeneous doping in GaAs, Appl. Phys. Lett, vol.127, issue.9, pp.3667-3669, 1993.

E. O. Kane, J. Theory-of-tunneling, . Appl, . Phys, I. García et al., Low resistance tunnel junctions with type-II heterostructures, Appl. Phys. Lett, vol.32, issue.11, pp.118-125, 1961.

J. A. Floro, E. Chason, and S. R. Lee, 15) Floro, J. A.; Chason, E. Measuring Ge segregation by real-time stress monitoring during Si 1x Ge x molecular beam epitaxy, Appl. Phys. Lett, vol.405, pp.3830-3832, 1995.

L. Marigo-lombart, A. Arnoult, L. Mazenq, P. Dubreuil, B. Reig et al., Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Lasers, Mater. Sci. Semicond. Process, vol.61, pp.35-38, 2017.

V. Swaminathan, W. R. Wagner, and P. J. Anthony, As and Ga(As,Sb) Active Layers in 0.82 and 0.87 µm Injection Lasers, J. Electrochem. Soc, vol.130, pp.2468-2472, 1983.

C. Kidner, I. Mehdi, J. East, and G. Haddad, Bias circuit instabilities and their effect on the d.c. currentvoltage characteristics of double-barrier resonant tunneling diodes Solid-State Electron, vol.34, pp.149-156, 1991.

N. Cavassilas, Y. Claveau, M. Bescond, F. Michelini, N. Cavassilas et al., Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions, J. Renew. Sustain. Energy, vol.6, issue.21, pp.5815-5875, 2001.
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K. Louarn, Y. Claveau, L. Marigo-lombart, C. Fontaine, A. Arnoult et al., InAlGaAs/InGaAs bulk and quantum-well interband tunnel junctions for multijunction solar cells, J. Phys. D: Appl. Phys, vol.87, issue.24, p.145107, 2013.