High-k dielectric materials for microelectronics, Critical Reviews in Solid State and Materials Sciences, vol.28, pp.231-285, 2003. ,
,
,
,
high-k dielectrics for future generation memory devices, Microelectronic Engineering, vol.86, pp.1789-1795, 2009. ,
Nernst limit in dual-gated Si-nanowire FET sensors, Nanoletters, vol.10, p.1, 2010. ,
Al2O3/silicon nanoISFET with near ideal Nernstian response, Nanoletters, vol.11, pp.2334-2341, 2011. ,
DOI : 10.1021/nl200623n
Status and prospects of Al2O3-based surface passivation for silicon solar cells, Journal of Vacuum Science and Technology, vol.30, p.40802, 2012. ,
Investigation of Al2O3 barrier film properties made by atomic layer deposition onto fluorescent tris-(8-hydroxyquinoline) aluminium molecular films, Thin Solid Films, vol.548, pp.517-525, 2013. ,
Optically stimulated luminescence dosimetry in medicine, Physics in Medicine and Biology, vol.53, pp.351-379, 2008. ,
Evolution of the growth stress stiffness and microstructure of alumina thin films during vapour deposition, Journal of Applied Physics, pp.204-216, 2004. ,
Structural, optical and mechanical properties of amorphous and crystalline alumina thin films, Thin Solid Films, vol.568, pp.19-24, 2014. ,
Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapour deposition, Thin Solid Films, vol.516, pp.1290-1296, 2008. ,
Control of the structure and properties of aluminum oxide coating by pulsed magnetron sputtering, Journal of Vacuum Science and Technology, vol.17, pp.945-953, 1999. ,
Deposition, microstructure and properties of texture-controlled CVD ?-Al2O3 coatings, International Journal of Refractory Metals and Hard Materials, vol.23, pp.306-316, 2005. ,
Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition, Microelectronic engineering, vol.66, pp.842-848, 2003. ,
Physical and electrical properties of nanocrystalline prepared by remote plasma enhanced chemical vapour deposition, Journal of Vacuum Science and Technology, vol.19, pp.1353-1360, 2001. ,
Atomic layer deposition (ALD): from precursors to films structures, Thin Solid Films, vol.409, pp.138-146, 2002. ,
Thin film atomic layer deposition equipment for semiconductor processing, Thin Solid Films, vol.402, pp.248-261, 2002. ,
DOI : 10.1016/s0040-6090(01)01678-9
Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process, Journal of Applied Physics, vol.97, p.121301, 2005. ,
Al2O3 thin film growth on Si (100) using binary sequence chemistry, Thin Solid Films, vol.292, pp.135-144, 1997. ,
Dependence of atomic layerdeposited Al2O3 films characteristics on growth temperature and Al precursors of Al, vol.3, p.3 ,
, Journal of Vacuum Science and Technology, vol.15, pp.2993-2997, 1997.
Effect of water dose on the atomic layer deposition rate of oxide thin films, Thin Solid Films, vol.368, pp.1-7, 2000. ,
Viscous flow reactor with quartz microbalance for thin film growth by atomic layer deposition, Review of Scientific Instruments, vol.73, pp.2981-2987, 2002. ,
Characterization of Al2O3 thin films prepared by thermal ALD, Energy Procedia, vol.77, pp.558-564, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01218293
Structure and properties of Al2O3 thin films deposited by ALD process, pp.319-326, 2016. ,
Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate, Thin Solid Films, vol.476, pp.252-257, 2005. ,
Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor, Journal of the Electrochemical Society, vol.154, pp.165-169, 2007. ,
Influence of surface temperature on the mechanism of atomic layer deposition of aluminum oxide using an oxygen plasma and ozone, Langmuir, pp.350-357, 2012. ,
Room-temperature ALD of metal oxide thin films by energy-enhanced ALD, Chemical Vapor Deposition, vol.19, pp.125-133, 2013. ,
Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors, Thin Solid Films, vol.565, pp.19-24, 2014. ,
Island growth as a growth model in atomic layer deposition: a phenomenological model, Journal of Applied Physics, pp.7686-7695, 2004. ,
Comparative measurements on atomic layer deposited Al2O3 thin films using ex-situ table top and mapping ellipsometry as well as X-ray and VUV reflectometry, Thin Solid Films, vol.541, pp.131-135, 2013. ,
Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infra-red spectroscopy, Applied Physics Letters, vol.92, p.231904, 2008. ,
Dry etching characteristics of Mo and Al2O3 films in O2/Cl2/Ar inductively coupled plasmas, Thin Solid Films, vol.552, pp.105-110, 2014. ,
The tension of metallic films deposited by electrolysis, Proceedings of the Royal Society of London, vol.9, pp.172-175, 1909. ,
Influences of deposition and crystallization kinetics on the properties of silicon films deposited by chemical vapour deposition from silane and disilane, Thin Solid Films, vol.518, pp.6897-6903, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-01511365
Handbook of optical constant of solids, vol.II, pp.0-12, 1998. ,
Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate, Applied Physics Letters, vol.81, pp.334-336, 2002. ,
,
The impact of thickness and thermal annealing on refractive index for aluminium oxide thin films deposited by atomic layer deposition, Nanoscale Research Letters, vol.10, pp.46-51, 2015. ,
Crystallization behaviour of thin ALD-Al2O3 films, Thin Solid Films, vol.425, pp.2016-220, 2003. ,
Mechanical stress in ALDAl2O3 films, Applied Surface Science, vol.252, pp.200-204, 2005. ,
, Metals, Alloys, Compounds, Ceramics, Polymers, Composites, 1993.
, Figure 7: XRD investigation of the 400-cycle PE-ALD Al2O3 sample with annealing temperature: a, b) XRD patterns and c) intensity peak height at 67, p.8