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Experimental, analytical and numerical investigation of non-linearity of SOI diode temperature sensors at extreme temperatures

Abstract : This paper presents the performance of a silicon-on-insulator (SOI) p+/p-well/n+ diode temperature sensor, which can operate in an extremely wide temperature range of 80 K to 1050 K. The thermodiode is placed underneath a tungsten micro-heater which is embedded in a thin dielectric membrane, obtained with a post-CMOS deep reactive ion etching process. Analytical and numerical models are used to support experimental findings. Non-linearity, sensitivity and methods for their reduction and enhancement, respectively, are investigated in detail.
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https://hal.laas.fr/hal-02082717
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Submitted on : Thursday, March 28, 2019 - 1:32:07 PM
Last modification on : Friday, January 10, 2020 - 9:10:13 PM

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A. de Luca, V. Pathirana, S.Z. Ali, Daniela Dragomirescu, F. Udrea. Experimental, analytical and numerical investigation of non-linearity of SOI diode temperature sensors at extreme temperatures. Sensors and Actuators A: Physical , Elsevier, 2015, 222, pp.31-38. ⟨10.1016/j.sna.2014.11.023⟩. ⟨hal-02082717⟩

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