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Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics

Abstract : This paper presents an organic semiconductor transistor, with a vertical current modulation and a horizontal conduction. The simulations show a stronger top gate influence and establish four work regimes, depending on the top and bottom gates biasing. In the most favorable regime for the holes channel, under the reverse biased n+p junction, the holes/electrons current densities ratio reaches 0.168/269. However, an ambipolar OTFT function occurs under the reverse biasing of the vertical junction, with a top n-layer and a bottom p-layer. Due to the asymmetrical doping profile, the n+ channel conduction prevails in all the regimes. Therefore, the maximum current density of 1900A/cm2 is ensured by a double n channel, when both gates are positive biased. After simulations, three distinct work regimes are revealed by this single device: a SOI behavior with volume channel, a JFET with neutral median channel and an OTFT with one or more interface channels.
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Submitted on : Thursday, March 28, 2019 - 5:53:29 PM
Last modification on : Friday, January 10, 2020 - 9:10:13 PM

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Cristian Ravariu, Daniela Dragomirescu. Different Work Regimes of an Organic Thin Film Transistor OTFT and Possible Applications in Bioelectronics. American Journal of Bioscience and Bioengineering, Science Publishing Group, 2015, 3 (3), pp.7-13. ⟨10.11648/j.bio.s.2015030301.12⟩. ⟨hal-02083172⟩

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