D. Floriot, V. Brunel, M. Camiade, C. Chang, H. Blanck et al., GH25-10 : New qualified power GaN HEMT process from technology to product overview, 9 th European Microwave Integrated Circuit Conference, p.4, 2014.

S. D. Nsele, C. Robin, J. G. Tartarin, L. Escotte, S. Piotrowicz et al., Ka-band Low Noise Amplifiers based on InAlN/GaN technologies, 23 th International Conference on Noise and Fluctuations, p.4, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01234061

G. Meneghesso, Reliability issues of Gallium Nitride high electron mobility transistors, Int. Journal of Microwave Wireless Technologies, vol.2, issue.1, pp.39-50, 2010.

O. Lazar, J. G. Tartarin, B. Lambert, C. Moreau, J. L. Roux et al., New Approach for an Accurate Schottky Barrier Height's Extraction by I-V-T Measurements, International Microwave Symposium IMS 2015, p.4

J. G. Tartarin, Diagnostic Tools For Accurate Reliability Investigations of GaN Devices, 21 th International Conference on Noise and Fluctuations (ICNF 2011), p.6, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00907447

J. G. Tartarin, G. Astre, S. Karboyan, T. Noutsa, and B. Lambert, Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: impact of HTRB stress on short term and long term memory effects, p.4, 2013.

J. B. Ibbetson, Polarization effects, surface states, and the source of electrons in AlGaN/GaN/GaN heterostructure field effect transistor, Appl. Phys. Lett, vol.77, issue.2, pp.250-252, 2000.

B. Bakeroot, On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metalinsulator-semiconductor high electron mobility transistors, Journal of Applied Physics, vol.116, issue.13, p.134506, 2014.

O. Lazar, J. G. Tartarin, B. Lambert, C. Moreau, and J. L. Roux, Correlation between transient evolutions of the gate and drain currents in
URL : https://hal.archives-ouvertes.fr/hal-01234080

A. Technologies, Microelectronics Reliability, vol.55, pp.1714-1718, 2015.

G. Longobardi, F. Udrea, S. Sque, G. A. Hurkx, J. Croon et al., Impact of Donor traps on the 2DEG and Electrical behavior of AlGaN/GaN MISFETs, IEEE Electron Device Letters, vol.35, issue.1, pp.27-29, 2014.