Barrier inhomogeneities at Schottky contacts, J. Appl. Phys, vol.69, issue.3, pp.1522-1533, 1991. ,
Electron transport at metal-semiconductor interfaces: General theory, Phys. Rev. B, vol.45, issue.23, pp.13509-13523, 1992. ,
Evidence for the double distribution of barrier heights in Pd2Si/n-Si Schottky diodes from I-V-T measurements, Semicond. Sci. Technol, vol.11, issue.8, pp.1203-1208, 1996. ,
Analysis of barrier inhomogeneities in AlGaN/GaN HEMTs' Schottky diodes by IVT measurements, Eur. Microw. Integr. Circuits Conf. EuMIC, pp.240-243, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-01343345
New Approach for an Accurate Schottky Barrier Height's Extraction by IVT Measurements, IEEE Int. Microw. Symp. IMS, pp.309-312, 2015. ,
Understanding Imperfections in GaN HEMTs" presented at CS Mantech, 2014. ,
Deep-level characterization in GaN HEMTs -Part I : Adv. and limitations of Drain current transient measurements, IEEE Trans. On Electron Devices, vol.60, issue.10, pp.3166-3175, 2013. ,
Oxygen-related border traps in MOS and GaN devices, IEEE 11 th Int. Conf. on SolidState and Integr. Circuit Techn. (ICSICT), p.7, 2012. ,
Physical degradation of GaN HEMT devices under high drain bias reliability testing, Microelectronics Reliability, vol.49, pp.478-483, 2009. ,
Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs, IEEE EDL, vol.37, pp.474-477, 2016. ,