Skip to Main content Skip to Navigation
Journal articles

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Abstract : We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Low-frequency noise measurements confirm the presence of field-assisted emission from trap states. The 1/f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range.
Complete list of metadata

Cited literature [27 references]  Display  Hide  Download
Contributor : Jean-Guy Tartarin <>
Submitted on : Tuesday, April 2, 2019 - 3:56:16 PM
Last modification on : Thursday, June 10, 2021 - 3:05:25 AM
Long-term archiving on: : Wednesday, July 3, 2019 - 4:56:53 PM


Publisher files allowed on an open archive



Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, S. Piotrowicz, S. Delage. Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures. Applied Physics Letters, American Institute of Physics, 2014, 105 (19), pp.192105. ⟨10.1063/1.4901906⟩. ⟨hal-02088149⟩



Record views


Files downloads