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Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Abstract : We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Low-frequency noise measurements confirm the presence of field-assisted emission from trap states. The 1/f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range.
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https://hal.laas.fr/hal-02088149
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Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, S. Piotrowicz, S. Delage. Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures. Applied Physics Letters, American Institute of Physics, 2014, 105 (19), pp.192105. ⟨10.1063/1.4901906⟩. ⟨hal-02088149⟩

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