J. H. Werner and H. H. Güttler, Barrier inhomogeneities at Schottky contacts, J. Appl. Phys, vol.69, issue.3, pp.1522-1533, 1991.
DOI : 10.1063/1.347243

R. T. Tung, Electron transport at metal-semiconductor interfaces: General theory, Phys. Rev. B, vol.45, issue.23, pp.13509-13523, 1992.
DOI : 10.1103/physrevb.45.13509

S. Chand and J. Kumar, Evidence for the double distribution of barrier heights in Pd2Si/n-Si Schottky diodes from I-V-T measurements, Semicond. Sci. Technol, vol.11, issue.8, pp.1203-1208, 1996.

S. Karboyan, Analysis of barrier inhomogeneities in AlGaN/GaN HEMTs' Schottky diodes by IVT measurements, Eur. Microw. Integr. Circuits Conf. EuMIC, pp.240-243, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01343345

O. Laz?r, New Approach for an Accurate Schottky Barrier Height's Extraction by IVT Measurements, IEEE Int. Microw. Symp. IMS, pp.309-312, 2015.

R. Stevenson, Understanding Imperfections in GaN HEMTs" presented at CS Mantech, 2014.

D. Bisi, Deep-level characterization in GaN HEMTs -Part I : Adv. and limitations of Drain current transient measurements, IEEE Trans. On Electron Devices, vol.60, issue.10, pp.3166-3175, 2013.
DOI : 10.1109/ted.2013.2279021

D. M. Fleetwood, Oxygen-related border traps in MOS and GaN devices, IEEE 11 th Int. Conf. on SolidState and Integr. Circuit Techn. (ICSICT), p.7, 2012.

S. Y. Park, Physical degradation of GaN HEMT devices under high drain bias reliability testing, Microelectronics Reliability, vol.49, pp.478-483, 2009.

M. Meneghini, Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs, IEEE EDL, vol.37, pp.474-477, 2016.