Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis

Abstract : The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
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Jean-Guy Tartarin, Damien Saugnon, Bernard Franc, H. Maher, F. Boone. Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.17-20, ⟨10.23919/EuMIC.2018.8539919⟩. ⟨hal-02088200⟩

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