A. S. Alqadami, S. Madhuwantha, R. Farrell, and J. Dooley, A 5 W High Efficiency Class AB Power Amplifier for LTE Base Station Application, 28th Irish Signals and Systems Conference, pp.1-5, 2017.

V. Camarchia, R. Quaglia, C. Ramella, and M. Pirola, Power amplifier MMICs for 15 GHz microwave links in 0.25 ?m GaN technology, Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC, pp.1-3, 2017.

H. Q. Tao, W. Hong, B. Zhang, and X. M. Yu, A Compact 60W X-Band GaN HEMT Power Amplifier MMIC, IEEE Microw. Wirel. Components Lett, vol.27, issue.1, pp.73-75, 2017.

M. Rudolph, GaN HEMTs for low-noise amplification -status and challenges, IEEE Integrated Nonlinear Microwave and Millimetrewave Circuits Workshop (INMMiC, pp.1-4, 2017.

P. Waltereit, J. Kühn, R. Quay, F. Van-raay, M. Dammann et al., High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 10^5 hours, IEEE European Microwave Integrated Circuit Conference (EuMIC), pp.123-126, 2012.

A. Katz, J. Macdonald, R. Dorval, B. Eggleston, P. Drexler et al., High-Efficiency High-Power Linearized L-Band SSPA for Navigational Satellites, IEEE MTT-S International Microwave Symposium (IMS, pp.1834-1837, 2017.

M. Van-heijningen, P. De-hek, C. Dourlens, P. Fellon, G. Adamiuk et al.,

A. Technology, IEEE Trans. Microw. Theory Tech, vol.65, issue.11, pp.4428-4437, 2017.

D. H. Shin, I. B. Yom, and D. W. Kim, X-Band GaN MMIC Power Amplifier for the SSPA of a SAR System, IEEE International Symposium on Radio-Frequency Integration Technology (RFIT, pp.93-95, 2017.

K. Hirche, J. Lätti, M. Rostewitz, K. Riepe, B. Lambert et al., GaN Reliability Enhancement and Technology Transfer Initiative, pp.1-8

G. Soubercaze-pun, J. G. Tartarin, L. Bary, J. Rayssac, E. Morvan et al., Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design, IEEE MTT-S International Microwave Symposium (IMS, pp.747-750, 2006.
URL : https://hal.archives-ouvertes.fr/hal-01343917

J. Joh, J. A. Del-alamo, U. Chowdhury, and J. L. Jimenez, Correlation between RF and DC reliability in GaN high electron mobility transistors, Reliab. Compd. Semicond. Work, pp.185-194, 2008.

J. G. Tartarin, Diagnostic Tools For Accurate Reliability Investigations of GaN Devices, 21st Int. Conf. Noise Fluctuations, pp.452-457, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00907447

O. Lazar, J. G. Tartarin, B. Lambert, C. Moreau, and J. L. Roux, Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies, Microelectron. Reliab, vol.55, issue.9, pp.1714-1718, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01234080

. Fig, S-parameters evolution for PC_#A = 5 dB, vol.7